Ion-induced mixing in the W-WC/Si System

The present study investigates the ion-induced mixing of W–WC nanocomposite thin films under 100 keV Kr+ ion irradiation at three different fluences: 3 × 10¹⁵, 1 × 10¹⁶, and 3 × 10¹⁶ ions/cm². The films were synthesized by co-sputtering of W and WC targets using the DC magnetron sputtering technique, followed by post-deposition annealing at 800 °C in Ar + H₂ environment to promote structural stabilization and phase development. The annealed films were subsequently irradiated with 100 keV Kr⁺ to simulate radiation damage conditions relevant to extreme environments. The structural, compositional, and morphological evolution of pristine and irradiated samples was examined using glancing incidence X-ray diffraction (GIXRD), Rutherford backscattering spectrometry (RBS), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). GIXRD analysis indicates irradiation-induced structural modifications in the nanocomposite films and emergence of the WSi₂ phase after irradiation. RBS results confirm the ion-induced mixing at the film-substrate interface causing the formation of WSi₂. SEM observations reveal a pronounced morphological transformation characterized by the formation of rod-like surface structures at higher irradiation fluences. Overall, the study provides insight into the ion-irradiation-induced structural and morphological evolution of W–WC nanocomposite films, contributing to the understanding of their performance and stability in extreme radiation environments.