Biestabilidade elétrica e óptica em diodos de tunelamento ressonante

The search for new devices that emits light with a minimum of energy dissipation it is always a question of interest of the scientific community. In this sense, we are showing a new method for controlling the light emission from a resonant tunneling dioden (RTD), which is a semiconductor nanostructure build with atomic scale precision. In this work we induced a bistable effectin the current (i) versus voltage(V) curve by means of an external resistance associated in series with a standard GaAs/AlGaAs RTD. The temperature dependence of the i x V curve was studied by a theoretical model based on effective mass approximation for understanding the elastic and inelastic scattering energies of the system. According to voltage regime, an electroluminescence (EL) was observed due to anionization impact caused by the high energy electron that strikes the to player sof the RTD structure creating an electron-hole pair, emitting light along the GaAs spectrum emission range. This EL effect depends on the applied bias voltage. When the external resistance is associated in series with the RDT, it was observed a gain in light of up to seven orders of magnitude relative to the case without resistance. By making use of Kirchoff’s Law, it was found that the resistance allowed access to parameters from the high voltage region that could not be achieve otherwise. Therefore, the induced bistability on RTDs is an efficient technique for controlling transport properties and light emission of theses nanometric devices, which could be applied as voltage filters or high light emission sensitive devices