MBE growth of HgCdTe hetero- and nanostructures

The modern tendencies of development of infrared detectors based on HgCdTe heterostructures are fabricating photoconductors and photodiodes type focal plane arrays (FPA). For producing of high quality FPA’s it is necessary to grow HgCdTe with high uniformity properties over the large surface area. The growth of HgCdTe hetero- and nanostructures on GaAs and Si substrates allows to decrease the cost of HgCdTe material and essentially to simplify the technological process of FPA fabricating. The investigations of development of HgCdTe hetero- and nanostructures growth on GaAs substrates are presented. Multi-chamber MBE installation for growth of HgCdTe epilayers on GaAs and Si substrates up to 4” in diameter with precise control of films quality in situ allows to solve many problems connected with the producing high uniformity MCT layer composition over the surface area and control the MCT composition throughout the thickness. The defects formation mechanisms, its nature, the parameters characterization allows are presented.The growth of HgCdTe heterostructures with different composition distribution throughout the thickness allows to prepare material with unique properties that lead to simplification of fabricating high quality IR detectors on their basis.
The new fields of science are connected with different new physical phenomena studied on HgCdTe nanostructures such as single or multilayer quantum wells (QW). The results of HgCdTe based QW mostly HgTe QW growth with ellipsomentric control and parameters measurement are presented. The application of HgCdTe heterostructures for different IR detector type is presented. We presented the results of study of different HgTe QW in field of carrier transport, interaction with THz radiation, for laser radiation, 2D and 3D TI.